Please note that JavaScript and style sheet are used in this website,
Due to unadaptability of the style sheet with the browser used in your computer, pages may not look as original.
Even in such a case, however, the contents can be used safely.
Wide selection of options
Devices from NEC Electronics are available with options that extend the range of its leading-edge CMOS process, delivering the versatility to support a wide spectrum of applications.
- Optional process lineup
- Embedded DRAM
- Non volatile memory
- Passive elements
- Bi polar device
These optional processes can be mixed and matched as required without compromising the high performance and reliability of the standard CMOS process. For example, large-scale embedded DRAM blocks can be integrated without affecting the CMOS logic. This commitment was reaffirmed in 2006 with the development of embedded DRAM for the 55 nm mode. And development of embedded DRAM for the next-generation 40 nm node is currently underway.
Three or more options are available for the standard CMOS process itself, allowing solutions that deliver both high speed and low power consumption. By mixing and matching the appropriate transistor types, designers can minimize overall power consumption while still achieving critical timing paths.
|
|