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High-speed random access eDRAM
NEC Electronics' unique MIM capacitors make our eDRAM random access speed significantly faster than that of other eDRAM.
Our 130 nm eDRAM achieves 314-MHz random access (latency=1) at 1.2V and offers assured 200-MHz random access under worst-case conditions (VDD=1.1V, Tj=10.5°C, worst-case process). For the 90 nm generation, NEC Electronics' eDRAM supports 250-MHz random access at 0.9V.
These eDRAM technologies also offer straightforward interfacing with SRAM-like access. At the beginning of the clock cycle (T=0), you can set any row and column address. Further, you can do either a READ or WRITE operation within the same clock cycle. With this configuration and our high-speed eDRAM cell, the data access speed (tRAC) of our 130 nm eDRAM is only 4.7 ns in a 5ns clock cycle (200 MHz). In contrast, conventional eDRAM is limited to an equivalent random access speed of about 20 MHz due to the idle clock cycles (latency) involved in getting initial data.
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