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QDR™II SRAM 36M bit
(Operating ambient temperature: Commercial TA=0 to +70°C),
(Operating ambient temperature: Industrial TA= -40 to +85°C)
36M bits (4M words x 8 bits organization)
|
Part Number
|
Speed
Grade
|
Clock
Frequency
(MHz)
|
Supply Voltage
(V)
|
Package
|
Remark
|
Data
Sheet
|
|
0 to +70°C
|
-40 to +85°C
|
Chip
|
I/O*1
|
|
µPD44325082
|
E40
|
E40Y
|
250
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 2
|
 (385KB)
|
|
E50
|
E50Y
|
200
|
|
µPD44325084
|
E37
|
--
|
270
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 4
|
(388KB)
|
|
E40
|
E40Y
|
250
|
|
E50
|
E50Y
|
200
|
|
Note(*)
- During normal operation, the supply voltage of I/O must not exceed that of Chip.
36M bits (4M words x 9 bits organization)
|
Part Number
|
Speed
Grade
|
Clock
Frequency
(MHz)
|
Supply Voltage
(V)
|
Package
|
Remark
|
Data
Sheet
|
|
0 to +70°C
|
-40 to +85°C
|
Chip
|
I/O*1
|
|
µPD44325092
|
E40
|
E40Y
|
250
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 2
|
(385KB)
|
|
E50
|
E50Y
|
200
|
|
µPD44325094
|
E37
|
--
|
270
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 4
|
(388KB)
|
|
E40
|
E40Y
|
250
|
|
E50
|
E50Y
|
200
|
|
Note(*)
- During normal operation, the supply voltage of I/O must not exceed that of Chip.
36M bits (2M words x 18 bits organization)
|
Part Number
|
Speed
Grade
|
Clock
Frequency
(MHz)
|
Supply Voltage
(V)
|
Package
|
Remark
|
Data
Sheet
|
|
0 to +70°C
|
-40 to +85°C
|
Chip
|
I/O*1
|
|
µPD44325182
|
E40
|
E40Y
|
250
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 2
|
(385KB)
|
|
E50
|
E50Y
|
200
|
|
µPD44325184
|
E37
|
--
|
270
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 4
|
(388KB)
|
|
E40
|
E40Y
|
250
|
|
E50
|
E50Y
|
200
|
|
Note(*)
- During normal operation, the supply voltage of I/O must not exceed that of Chip.
36M bits (1M words x 36 bits organization)
|
Part Number
|
Speed
Grade
|
Clock
Frequency
(MHz)
|
Supply Voltage
(V)
|
Package
|
Remark
|
Data
Sheet
|
|
0 to +70°C
|
-40 to +85°C
|
Chip
|
I/O*1
|
|
µPD44325362
|
E40
|
--
|
250
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 2
|
(385KB)
|
|
E50
|
--
|
200
|
|
µPD44325364
|
E37
|
--
|
270
|
1.8±0.1
|
1.4 to 1.9
|
F5-EQ2:
165-pin BGA
(13x15mm)
|
Burst Length of 4
|
(388KB)
|
|
E40
|
--
|
250
|
|
E50
|
--
|
200
|
|
Note(*)
- During normal operation, the supply voltage of I/O must not exceed that of Chip.
QDR RAMs and Quad Data Rate RAMs comprise a new series of products developed by Cypress Semiconductor, Renesas, IDT, NEC Electronics and Samsung.
