Cell-Based ASIC Overview
Your high-volume projects demand the benefits of NEC's feature rich,
high-density cell-based ASICs. With leading ASIC process technology and embedded DRAM,
NEC provides the options you need for high performance system-level integration.
Product family |
Technology node |
Max. available gates |
Max. I/Os |
Delay time (F/O=2, 2-input NAND) |
| cb90 | 90 nm | 100,000K | 2800 | 10.2 ps
| | cb-130 | 130 nm | 52,000K | 3000 | 16.2ps | | cb-12 | 150 nm* | 32,000K | 2700 | 17.1 ps | | cb-10vx | 0.25 µm | 19,519K | 2016 | 77 ps | | cb-9vxvm | 0.35 µm | 2,841K | 1204 | 155 ps |
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* 0.18 µm metal pitch, 0.13 µm transistor
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Documentation
Please use our Tech Support Form if you wish to request copies of the ASIC documentation: |
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Product Data Design Manuals
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Narrow Block Libraries
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Wide Block Libraries
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