Cell-Based ASICs

CB-90

Description

Based on NEC Electronics’ 90 nm UX6 process technology, the CB-90 ASIC design platform is designed for a wide range of low-power, high-performance applications such as broadband communications equipment, high-end computing and storage systems, and mobile computing devices.

Features

• GHz range operation
• Ultra-high-speed (L = 60 nm)
• High density up to 100M gates per chip
• Low power consumption
• Optimized low standby leakage transistor
• Combination of low-leakage transistors and high performance in the same design
• Multiple core power supply design flow
• Automatic voltage control technology
• Optimized libraries for density, power and speed

Multiple Cell-Based Libraries

To address the specific needs of a broad spectrum of ASIC designs requiring high performance and low power, NEC Electronics has developed three different cell-based libraries and IP within the CB-90 ASIC family. Each library is developed to provide the performance and features required of their target application.

• Low Power CB-90L: The CB-90L library uses cells that offer reduced current leakage in standby mode, which when combined with the active operating current reduction, makes the library an ideal solution for mobile battery-powered applications.
• Cost Efficient CB-90M: With its high density (404K usable gates/mm2) and efficient use of die area, the CB-90M library offers key advantages for cost-sensitive products such as digital consumer electronics.
• High Speed CB-90H: The CB-90H library, with its high-drive cells, offers the heightened reliability and low capacitance needed to transfer large quantities of data at very high speeds, making it ideal for broadband communications and high-end computing and storage applications. Because the CB-90 is a restricted product, please contact NEC Electronics America when considering its use.

CB-90 Packaging Options

NEC Electronics offers a variety of ball grid array packaging configurations for CB-90 customers to support a broad number of applications. Click here for a list of supported packages.

IP Lineup

Within the CB-90 family, NEC Electronics offers a wide range of IP cores and high-performance I/Os. In addition to SRAM memory macros, NEC Electronics offers embedded DRAM macros from 4Mb to 16Mb in various configurations. Click here for more information on featured IP cores.

High Integration, High Speed and Low Power Consumption

NEC Electronics' CB-90 family is built on the advanced UX6 microfabrication process to achieve high integration and support for up to 100 million usable gates. High clock speeds are possible because of 1-volt, high-speed CMOS transistors that realize ultra-low power using a gate length of 60 nm, all-copper wiring and low-k (k = 2.9) inter-metal dielectrics.

The use of up to nine levels of all-copper wiring (minimum wiring pitch of 0.28 µm) in the CB-90 libraries enables both increased density and higher reliability. Moreover, the use of low-resistance copper material enables NEC Electronics to realize thinner wiring layers, contributing to higher speed and lower power consumption due to reduced wire capacitance.

Low gate-leakage is achieved by combining a radical nitridation process, which lowers the leakage current of the gate oxidized film, and a triple-oxide process that forms MOS transistors with three different gate-oxidized film thickness. Mixing optimum transistors according to the target circuit performance lowers power consumption by approximately 40% compared to power consumption of previous generations. The use of low-power techniques including a multi-power-supply design flow and automatic voltage control technology further reduces power consumption.

Using cells with low standby-leakage prevents the usual increase in leakage that accompanies a smaller geometry process and reduces leakage to the few µA required for backup operations at the chip level. Also, in normal operation at 1.0 volts, using high-density cells in circuits that perform high-speed signal processing increases speed and reduces power consumption. The combination of low standby-leakage high-density cell libraries and unique low-power design techniques enables NEC Electronics to realize sophisticated power management in its system LSI devices.